Investigation of 3D Patterns on EUV Masks by Means of Scatterometry and Comparison to Numerical Simulations

摘要

EUV scatterometry is performed on 3D patterns on EUV lithography masks.Numerical simulations of the experimental setup are performed using a rigorousMaxwell solver. Mask geometry is determined by minimizing the differencebetween experimental results and numerical results for varied geometrical inputparameters for the simulations.